creat by a r - patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit v rrm v dv/dt v/ s v ac v typ max typ max typ max typ max t j = 25c 0.76 0.82 0.80 0.88 0.81 0.90 0.84 0.92 t j = 125c 0.64 0.69 0.65 0.73 0.68 0.77 0.70 0.79 t j = 25c 0.86 0.92 0.90 0.96 0.89 0.98 0.91 1.00 t j = 125c 0.75 0.80 0.78 0.86 0.77 0.86 0.80 0.89 t j = 25c a t j = 125c ma r jc c/w t j c t stg c document number: ds_d1411039 version: g14 v instantaneous forward voltage per diode ( note1 ) i f = 30a v f 10000 4.5 120 molding compound meets ul 94 v-0 flammability rating typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec per device maximum ratings and electrical characteristics (t a =25c unless otherwise noted) maximum repetitive peak reverse voltage tsf30h 100c tsf30h 120c tsf30h 200c polarity: as marked per diode i f(av) voltage rate of change (rated v r ) typical thermal resistance instantaneous reverse current per diode at rated reverse voltage 1500 - 55 to +150 - 55 to +150 i f = 15a note 1: pulse test with pulse width=300 s, 1% duty cycle operating junction temperature range storage temperature range 30 15 i r 150 20 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode isolation voltage from terminal to heatsink t = 1 min 150 a tsf30h 150c 100 mounting torque: 0.56 nm max. weight: 1.7 g (approximately) a parameter 200 150 i fsm ito-220ab TSF30H100C thru tsf30h200c taiwan semiconductor trench schottky rectifier - halogen-free according to iec 61249-2-21 definition maximum average forward rectified current mechanical data case: ito-220ab
document number: ds_d1411039 version: g14 g packing example preferred part no. part no. note 1: "xxx" defines voltage from 100v (TSF30H100C) to 200v (tsf30h200c) packing code TSF30H100C thru tsf30h200c taiwan semiconductor (t a =25c unless otherwise noted) ordering information part no. packing code suffix tsf30hxxxc (note 1) package tsf30h120c c0g tsf30h120c ratings and characteristics curves green compound g ito-220ab 50 / tube packing code suffix description c0 packing code c0 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j =25 c t j =125 c t j =150 c 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 with heatsink 3in x 5in x 0.25in al-plate average forward current (a) case temperature ( o c) forward voltage (v) fig. 2 typical forward characteristics TSF30H100C instantaneous forward current (a) 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 t j =100 c t j =25 c t j =125 c t j =150 c instantaneous forward current (a) forward voltage (v) tsf30h120c fig.1 forward current derating curve fig. 3 typical reverse characteristics 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j =25 c t j =125 c t j =150 c tsf30h150c t j =100 c forward voltage (v) fig. 4 typical forward characteristics instantaneous forward current (a)
document number: ds_d1411039 version: g14 TSF30H100C thru tsf30h200c taiwan semiconductor 10 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p tsf30h200c tsf30h150c TSF30H100C tsf30h120c capacitance (pf) fig. 10 typical junction capacitance reverse voltage (v) 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 t j =25 c t j =125 c t j =100 c t j =150 c percent of rated peak reverse voltage.(%) tsf30h200c instantaneous reverse current(ma) fig. 9 typical reverse characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage.(%) tsf30h150c instantaneous reverse current(ma) fig. 8 typical reverse characteristics t j =25 c t j =125 c t j =100 c t j =150 c 0.00001 0.0001 0.001 0.01 0.1 1 10 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage.(%) tsf30h120c instantaneous reverse current(ma) fig. 7 typical reverse characteristics t j =25 c t j =125 c t j =100 c t j =150 c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage.(%) TSF30H100C instantaneous reverse current (ma) fig. 6 typical reverse characteristics t j =25 c t j =125 c t j =150 c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 tsf30h200c fig. 5 typical forward characteristics instantaneous forward current (a) forward voltage (v) t j =25 c t j =125 c t j =100 c t j =150 c
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.80 - 0.071 o 2.41 2.67 0.095 0.105 marking diagram p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411039 version: g14 TSF30H100C thru tsf30h200c taiwan semiconductor dim. unit (mm) unit (inch) ito-220ab
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411039 version: g14 TSF30H100C thru tsf30h200c taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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